SI4466DY

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 15 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.006 Ohms


Features:

• 15 A, 20 V. RDS(on) = 0.0075 @ VGS = 4.5 V
   RDS(on) = 0.010 @ VGS = 2.5 V.
• Low gate charge (47nC typical).
• Fast switching speed.
• High performance trench technology for extremely
   low RDS(ON).
• High power and current handling capability.


Application

• DC/DC converter
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	15	A
		50
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This N-Channel 2.5V specified MOSFET of the Si4466DY is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.