SI4480DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 80 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 7.6 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

• 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 V
RDS(ON) = 0.033 @ VGS = 6 V.
• Low gate charge (34nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	80	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	7.6	A
		50
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This N-Channel MOSFET of the Si4480DY has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

N-Channel 80-V (D-S) MOSFET