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SI4486EY

MOSFET 100V 7.9A 3.8W

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SeekIC No. : 00166679 Detail

SI4486EY: MOSFET 100V 7.9A 3.8W

SI4486EY Data Sheet

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Part Number:
SI4486EY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.9 A
Resistance Drain-Source RDS (on) : 25 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 25 mOhms
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 7.9 A


Pinout

Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175)a TA = 25 ID 7.9 5.4 A
TA = 85 6.1 4.2
Pulsed Drain Current IDM 40
Avalanche Current L = 0 1 mH IAR 30
Repetitive Avalanche Energy (Duty Cycle 1%) EAR 45 mJ
Continuous Source Current (Diode Conduction)a IS 3.1 1.5 A
Maximum Power Dissipationa TA = 25 PD 3.8 1.8 W
TA = 85 2.3 1.1
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175





Description

N-Channel 100-V (D-S) MOSFET Si4486EY




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