Features: TrenchFET Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 30 -8 V Gate-Source Voltage VGS ±20 ±8 Continuous Drain Current (TJ ...
Si4503DY: Features: TrenchFET Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-...
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| Parameter | Symbol | N-Channel | P-Channel | Unit | |||
| 10 secs | Steady State | 10 secs | Steady State | ||||
| Drain-Source Voltage | VDS | 30 | -8 | V | |||
| Gate-Source Voltage | VGS | ±20 | ±8 | ||||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | 8.8 | 6.5 | -4.5 | -3.8 | A |
| TA = 70°C | 7.0 | 5.2 | -3.6 | -3.0 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 30 | -20 | ||||
| Continuous Source Current (Diode Conduction)a | IS | 2.0 | 1.1 | -1.2 | -0.9 | ||
| Maximum Power Dissipationa | TA = 25°C | PD | 2.27 | 1.25 | 1.38 | 1.0 | W |
| TA = 70°C | 1.45 | 0.8 | 0.88 | 0.64 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | °C | ||||