Si4503DY

Features: TrenchFET Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 30 -8 V Gate-Source Voltage VGS ±20 ±8 Continuous Drain Current (TJ ...

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SeekIC No. : 004490311 Detail

Si4503DY: Features: TrenchFET Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-...

floor Price/Ceiling Price

Part Number:
Si4503DY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

TrenchFET Power MOSFET


Application

· Level Shift
·  Load Switch



Pinout

  Connection Diagram


Specifications

Parameter Symbol N-Channel P-Channel Unit
10 secs Steady State 10 secs Steady State
Drain-Source Voltage VDS 30 -8 V
Gate-Source Voltage VGS ±20 ±8
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 8.8 6.5 -4.5 -3.8 A
TA = 70°C 7.0 5.2 -3.6 -3.0
Pulsed Drain Current(10 s Pulse Width) IDM 30 -20
Continuous Source Current (Diode Conduction)a IS 2.0 1.1 -1.2 -0.9
Maximum Power Dissipationa TA = 25°C PD 2.27 1.25 1.38 1.0 W
TA = 70°C 1.45 0.8 0.88 0.64
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C



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