Features: ·TrenchFET® Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 20 −20 V Gate-Source Voltage VGS ±16 ±12 Continuous Dr...
Si4511DY: Features: ·TrenchFET® Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State ...
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| Parameter | Symbol | N-Channel | P-Channel | Unit | |||
| 10 secs | Steady State | 10 secs | Steady State | ||||
| Drain-Source Voltage | VDS | 20 | −20 | V | |||
| Gate-Source Voltage | VGS | ±16 | ±12 | ||||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 9.6 | 7.2 | −6.2 | −4.6 | A |
| TA = 70 | 7.7 | 5.8 | −4.9 | −3.7 | |||
| Pulsed Drain Current | IDM | 40 | −40 | ||||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 0.9 | −1.7 | 0.9 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2 | 1.1 | 2 | 1.1 | W |
| TA = 70 | 1.3 | 0.7 | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||||