DescriptionThe Si4532CDY is designed as one kind of N- and P-Channel 30-V (D-S) MOSFET device that can be used in wide range of applications such as (1)DC/DC converter; (2)load switch. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21 Definition; (2)Tr...
Si4532CDY: DescriptionThe Si4532CDY is designed as one kind of N- and P-Channel 30-V (D-S) MOSFET device that can be used in wide range of applications such as (1)DC/DC converter; (2)load switch. And this devi...
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The Si4532CDY is designed as one kind of N- and P-Channel 30-V (D-S) MOSFET device that can be used in wide range of applications such as (1)DC/DC converter; (2)load switch. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.
The absolute maximum ratings of the Si4532CDY can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 6.0 to 3.9 A;(4)Pulsed Drain Current: 30 A;(5)Continuous Source-Drain Diode Current: 2.6 to 1.8 A;(6)Single Pulse Avalanche Current: 24 A;(7)Single Pulse Avalanche Energy: 2.5 mJ;(8)Maximum Power Dissipation: 2.78 to 1.14 W;(9)Operating Junction and Storage Temperature Range: -55 to 150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information such as the electrical characteristics about the Si4532CDY, please download the datasheet in www.seekic.com or www.chinaicmart.com.