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Si4532DY*

Features: · N-Channel 3.9A, 30V.RDS(ON) = 0.065W @VGS = 10V RDS(ON) = 0.095W @VGS = 4.5V.· P-Channel -3.5A,-30V.RDS(ON)= 0.085W @VGS = -10V RDS(ON)= 0.190 W @VGS = -4.5V.· High density cell design for extremely low RDS(ON).· High power and current handling capability in a widelyused surface mo...

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SeekIC No. : 004490316 Detail

Si4532DY*: Features: · N-Channel 3.9A, 30V.RDS(ON) = 0.065W @VGS = 10V RDS(ON) = 0.095W @VGS = 4.5V.· P-Channel -3.5A,-30V.RDS(ON)= 0.085W @VGS = -10V RDS(ON)= 0.190 W @VGS = -4.5V.· High density cell desig...

Si4532DY* Data Sheet

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Part Number:
Si4532DY*
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

· N-Channel 3.9A, 30V.RDS(ON) = 0.065W @VGS = 10V
   RDS(ON) = 0.095W @VGS = 4.5V.
· P-Channel -3.5A,-30V.RDS(ON)= 0.085W @VGS = -10V
   RDS(ON)= 0.190 W @VGS = -4.5V.
· High density cell design for extremely low RDS(ON).
· High power and current handling capability in a widely
    used surface mount package.
· Dual (N & P-Channel) MOSFET in surface mount
    package.


Specifications

Symbol Parameter Q1 Q2 Units
VDSS Drain-Source Voltage 30 -30 V
VGSS Gate-Source Voltage 20 -20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed		 3.9 -3.5 A
20 -20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a
(Note 1b)
(Note 1c)		 1.6
1
0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 °C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W



Description

These dual N- and P-Channel enhancement mode power field effect transistors of the Si4532DY* are produced using Fairchild's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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