SI4539ADY

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Continuous Drain Current : 5.9 A, 4.9 A
Resistance Drain-Source RDS (on) : 36 mOhms, 53 mOhms


Pinout




Specifications

Parameter		Symbol	N-Channel		P-Channel		Unit
			10 secs	Steady State	10 secs	Steady State
Drain-Source Voltage		VDS	30		-30		V
Gate-Source Voltage		VGS	±20		±20
Continuous Drain Current (TJ = 150°Ca	TA = 25°C	ID	5.9	4.4	-4.9	-3.7	A
	TA = 70°C		4.7	3.6	-3.9	-2.9
Pulsed Drain Current		IDM	30
Continuous Source Current (Diode Conduction)a		IS	1.7	0.9	-1.7	-0.9
Maximum Power Dissipationa Maximum Power Dissipationa	TA = 25°C	PD	2.0	1.1	2	1.1	W
	TA = 70°C		1.3	0.7	1.3	0.7
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 150				°C