SI4539DY

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7 A, - 5 A
Resistance Drain-Source RDS (on) : 0.053 Ohms


Features:

· N-Channel 7.0 A,30 V, RDS(ON)=0.028 W @ VGS=10 V
· RDS(ON)=0.040 W @ VGS= 4.5 V.
· P-Channel -5.0 A,-30 V,RDS(ON)=0.052 W @ VGS=-10 V
· RDS(ON)=0.080W @ VGS=-4.5 V.
· High density cell design for extremely low RDS(ON).
· High power and current handling capability in a widely used
· surface mount package.
· Dual (N & P-Channel) MOSFET in surface mount package.


Specifications

Symbol	Parameter	Q1	Q2	Units
VDSS	Drain-Source Voltage	30	-30	V
VGSS	Gate-Source Voltage	20	-20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	7	-5	A
		20	-20
PD	Power Dissipation for Dual Operation	2		W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1.6
		1
		0.9
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150		°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78		°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40		°C/W

Description

These dual N- and P -Channel enhancement mode power field effect transistors of the Si4539DY are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.