SI4542DY

Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : +/- 6 A
Resistance Drain-Source RDS (on) : 28 m Ohms


Features:

• Q1: N-Channel
  6 A, 30 V RDS(on) = 28 m @ VGS = 10V
  RDS(on) = 35 m @ VGS = 4.5V
• Q2: P-Channel
  6 A, 30 V RDS(on) = 32 m @ VGS = 10V
  RDS(on) = 45 m @ VGS = 4.5V


Application

• DC/DC converter
• Power management


Specifications

Symbol	Parameter	Q1	Q2	Units
VDSS	Drain-Source Voltage	30	-30	V
VGSS	Gate-Source Voltage	±20	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	6	-6	A
		20	-20
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2		W
		1.6
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +175		°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	75		°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40		°C/W

Description

This complementary MOSFET device of the Si4542DY is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Parameters:

Technical/Catalog Information	SI4542DY
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	28 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	830pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 5V
Package / Case	SO-8
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SI4542DY SI4542DY