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SI4558DY

MOSFET 30V 6A 2.4W

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SeekIC No. : 00165752 Detail

SI4558DY: MOSFET 30V 6A 2.4W

SI4558DY Data Sheet

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Part Number:
SI4558DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/18

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 40 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 40 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 ±6 ±6 A
TA = 70 ±4.7 ±4.7
Pulsed Drain Current IDM ±30 ±30
Continuous Source Current (Diode Conduction)a IS 2 2
Maximum Power Dissipationa TA = 25 PD 2.4 W
TA = 70 1.5
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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