SI4562DY

Packaging :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 7.1 A, 6.2 A
Resistance Drain-Source RDS (on) : 25 mOhms, 33 mOhms


Pinout




Specifications

Parameter		Symbol	N-Channel	P-Channel	Unit
Drain-Source Voltage		VDS	20	-20	V
Gate-Source Voltage		VGS	±12	±12
Continuous Drain Current (TJ = 150°C)a	TA = 25°C	ID	±7.1	±62	A
	TA = 70°C		±5.7	±4.9
Pulsed Drain Current(10 s Pulse Width)		IDM	±40	±40
Continuous Source Current (Diode Conduction)a		IS	1.7	-1.7	A
Maximum Power Dissipationa	TA = 25°C	PD	2.0		W
	TA = 70°C		1.3
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 150		°C