Si4565DY

Features: · TrenchFET Power MOSFET· 100% Rg Tested· UIS TestedApplicationCCFL InverterPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±12 ±16 Continuou...

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Si4565DY Picture
SeekIC No. : 004490320 Detail

Si4565DY: Features: · TrenchFET Power MOSFET· 100% Rg Tested· UIS TestedApplicationCCFL InverterPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Stea...

floor Price/Ceiling Price

Part Number:
Si4565DY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/12/26

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Product Details

Description



Features:

·  TrenchFET Power MOSFET
·  100% Rg Tested
·  UIS Tested



Application

CCFL Inverter


Pinout

  Connection Diagram


Specifications

Parameter Symbol N-Channel P-Channel Unit
10 secs Steady State 10 secs Steady State
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±12 ±16
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 5.2 3.9 -4.5 -3.3 A
TA = 70°C 4.2 3.1 -3.6 -2.7
Pulsed Drain Current(10 s Pulse Width) IDM 30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9 -1.7 -0.9
Avalanche Current L = 0 1 mH IAS 13 16
Single Pulse Avalanche Energy EAS 8.5 13 mJ
Maximum Power Dissipationa TA = 25°C PD 2.0 1.1 2 1.1 W
TA = 70°C 1.3 0.7 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C



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