Features: · TrenchFET Power MOSFET· 100% Rg Tested· UIS TestedApplicationCCFL InverterPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±12 ±16 Continuou...
Si4565DY: Features: · TrenchFET Power MOSFET· 100% Rg Tested· UIS TestedApplicationCCFL InverterPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Stea...
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| Parameter | Symbol | N-Channel | P-Channel | Unit | |||
| 10 secs | Steady State | 10 secs | Steady State | ||||
| Drain-Source Voltage | VDS | 40 | -40 | V | |||
| Gate-Source Voltage | VGS | ±12 | ±16 | ||||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | 5.2 | 3.9 | -4.5 | -3.3 | A |
| TA = 70°C | 4.2 | 3.1 | -3.6 | -2.7 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 30 | |||||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 0.9 | -1.7 | -0.9 | ||
| Avalanche Current | L = 0 1 mH | IAS | 13 | 16 | |||
| Single Pulse Avalanche Energy | EAS | 8.5 | 13 | mJ | |||
| Maximum Power Dissipationa | TA = 25°C | PD | 2.0 | 1.1 | 2 | 1.1 | W |
| TA = 70°C | 1.3 | 0.7 | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | °C | ||||