Power Switch ICs - Power Distribution N-Ch 30V
SI4779CY: Power Switch ICs - Power Distribution N-Ch 30V
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| Number of Outputs : | 1 | On Resistance (Max) : | 0.045 Ohms | ||
| Supply Current (Max) : | 0.07 mA | Maximum Operating Temperature : | + 85 C | ||
| Mounting Style : | SMD/SMT | Package / Case : | SO-8 |
| Parameter | Symbol | Steady State | Unit | |
| Voltage, IN to GND | VIN | 0.3 to 7 | V | |
| Voltage, ON | VON | 0.3 to 7 | ||
| Continuous Drain Current (TJ = 150C)a | TA = 25RC | ID | 2.4 | A |
| TA = 85RC | 2.4 | |||
| Maximum Power Dissipationa | TA = 70RC | PD | 0.65 | W |
| Operating Junction and Storage Temperature Range | Tj, Tstg | 65 to 125 | °C | |
The Si4779CY n-channel high-side switch combines a low rDS(on) MOSFET switch with a user set, pulse gate control (PGC) based current limit. This switch is designed to protect the system power supply from overloads and short circuit conditions in applications such as USB. The PGC based approach to the current limiter provides the additional benefit of keeping the MOSFET junction temperature within specification, thereby eliminating the need for thermal shutdown. The low quiescent current makes the Si4779CY ideal for use in battery powered devices. The Si4779CY operates on both 3-V and 5-V busses, and is packaged in the LITTLE FOOT SO-8 package.