Si4800 Selling Leads, Price trend, Si4800 DataSheet download, circuit diagram from SeekIC.com

Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment applications.PinoutSpecifications Symbol Parameter Conditions Typ Max Unit VDS drain-...

See larger image

SeekIC No. : 004490345 Detail

Si4800: Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment...

Si4800 Data Sheet

Get Latest Price

Part Number:: Si4800
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

SI4800,518 evaluate
MOSFET N-CH 30V 9A SOT96-1
SI4800BDY-T1-E3 evaluate
US $.31 - .46 / Piece

MOSFET 30V 9A 2.5W
SI4800BDY-T1-GE3 evaluate
US $.3 - .44 / Piece

MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

Product Details

Description

Features:

· Low on-state resistance
· Fast switching
· TrenchMOS™ technology.

Application

· DC to DC convertors
· DC motor control
· Lithium-ion battery applications
· Notebook PC
· Portable equipment applications.

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Conditions	Typ	Max	Unit
V_DS	drain-source voltage (DC)	Tj = 25 to 150 °C	-	30	V
I_D	drain current	Tsp = 25 °C; Figure 2 and 3	-	9	A
P_tot	total power dissipation	Tsp = 25 °C; Figure 1	-	2.5	W
T_j	junction temperature			150	°C
RDSon	drain-source on-state resistance	VGS = 10 V; ID = 9 A; Tj = 25 °C	15.5	18.5	m
RDSon	drain-source on-state resistance	VGS = 4.5 V; ID = 7 A; Tj = 25 °C	27.5	33	m

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: Si4800 in SOT96-1 (SO8).

Customers Who Bought This Item Also Bought

Si4800B
US $$0.20 - 0.30 / Piece

Supply Ability:10000Week

View details
SI4800BDY-T1
US $$1.00 - 1.00 / Piece

Supply Ability:1000Day

View details
SI4800BDY-T1-E3
US $$0.16 - 0.17 / Piece

Supply Ability:10000Week

View details
SI4800BDY-T1-E3
US $$0.15 - 2.40 / Piece

Supply Ability:10000Week

View details
SI4800BDY-T1-E3 6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
US $$0.08 - 0.13 / Piece

Supply Ability:1000Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

Si4800

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Cable Assemblies(5)

Static Control, ESD, Clean Room Products(496)

Semiconductor Modules(17785)

Resistors(1299)

Isolators(194)

Cables, Wires - Management(4448)