SI4800,518

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
Vgs(th) (Max) @ Id: 800mV @ 250µA
Current - Continuous Drain (Id) @ 25° C: -
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Supplier Device Package: 8-SO
Gate Charge (Qg) @ Vgs: 11.8nC @ 5V


Parameters:

Technical/Catalog Information	SI4800,518
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	18.5 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11.8nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	568; SOT96; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SI4800,518 SI4800,518