SI4922DY

Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 16 mOhms
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 6.7 A


Features:

• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics


Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS Si4922DY. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network Si4922DY is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.