SI4925DY

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.025 Ohms
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : - 6 A


Features:

· -6 A, -30 V. RDS(ON) = 0.032 W @ VGS = -10 V,
· RDS(ON) = 0.045 W @ VGS = -4.5 V.
· Low gate charge (14.5nC typical).
· High performance trench technology for extremely low
· RDS(ON).
· High power and current handling capability.

 

Pinout




Specifications

Symbol	Parameter	Si4925DY	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-6	A
		-20
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1
		0.9
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40	°C/W

Description

These P-Channel Logic Level MOSFETs Si4925DY are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications Si4925DY: load switching and power management, battery charging circuits, and DC/DC conversion.