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SI4927DY

MOSFET 30V 7.4A 2.5W

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SeekIC No. : 00166869 Detail

SI4927DY: MOSFET 30V 7.4A 2.5W

SI4927DY Data Sheet

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Part Number:
SI4927DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.4 A
Resistance Drain-Source RDS (on) : 28 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 28 mOhms
Continuous Drain Current : 7.4 A
Package / Case : SOIC-8 Narrow


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175°C)a TA = 25°C ID ±7.4 A
TA = 70°C ±5.8
Pulsed Drain Current(10 s Pulse Width) IDM ±40
Continuous Source Current (Diode Conduction)a IS -2.1
Maximum Power DissipationaMOSFET)a, b TA = 25°C PD 2.5 W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175 °C



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