Si4931DY Selling Leads, Price trend, Si4931DY DataSheet download, circuit diagram from SeekIC.com

Features: ·TrenchFET® Power MOSFET·Advanced High Cell Density ProcessApplication·Load SwitchingPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25...

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SeekIC No. : 004490382 Detail

Si4931DY: Features: ·TrenchFET® Power MOSFET·Advanced High Cell Density ProcessApplication·Load SwitchingPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage...

Si4931DY Data Sheet

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Part Number:: Si4931DY
Supply Ability:: 5000

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Upload time: 2025/12/25

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Si4900DY evaluate
Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS...
SI4900DY-T1-E3 evaluate
US $.45 - .82 / Piece

MOSFET 60V 5.3A 3.1W
SI4900DY-T1-GE3 evaluate
US $.27 - .44 / Piece

MOSFET 60V 5.3A 3.1W 58mohm @ 10V

Product Details

Description

Features:

·TrenchFET^® Power MOSFET
·Advanced High Cell Density Process

Application

·Load Switching

Pinout

Connection Diagram

Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		V_DS	−12		V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current (T_J= 150)^a	T_A = 25	I_D	−8.9	−6.7	A
	T_A = 70		−7.1	−5.4
Pulsed Drain Current		I_DM	−30
continuous Source Current (Diode Conduction)^a		I_S	−1.7	−0.9
Maximum Power Dissipation^a	T_A= 25	P_D	2.0	1.1	W
	T_A = 70		1.3	0.7
Operating Junction and Storage Temperature Range		T_J, T_stg	−55 to 150

Description

Dual P-Channel 12-V (D-S) MOSFET Si4931DY

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Si4931DY

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