Features: · TrenchFE Power MOSFET· Advanced High Cell Density ProcessApplicationLoad SwitchingPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -9.8...
Si4933DY: Features: · TrenchFE Power MOSFET· Advanced High Cell Density ProcessApplicationLoad SwitchingPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -12 | V | ||
| Gate-Source Voltage | VGS | ±8 | |||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | -9.8 | -7.4 | A |
| TA = 70°C | -7.8 | -5.9 | |||
| Pulsed Drain Current | IDM | -30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | -0.9 | ||
| Maximum Power Dissipationa | TA = 25°C | PD | 2.0 | 1.1 | W |
| TA = 70°C | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | ||