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SI4940DY

MOSFET 40V 5.7A 2.1W

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SeekIC No. : 00166941 Detail

SI4940DY: MOSFET 40V 5.7A 2.1W

SI4940DY Data Sheet

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Part Number:
SI4940DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.2 A
Resistance Drain-Source RDS (on) : 36 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Continuous Drain Current : 4.2 A
Resistance Drain-Source RDS (on) : 36 mOhms


Features:

TrenchFET Power MOSFET


Application

Automotive Airbags


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 5.7 4.2 A
TA = 70°C 4.5 3.4
Pulsed Drain Current(10 s Pulse Width) IDM 30
Continuous Source Current (Diode Conduction)a IS 1.8 0.9
Maximum Power Dissipationa TA = 25°C PD 2.1 1.1 W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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