Features: TrenchFET Power MOSFETApplication· Low Power Synchronous Rectifier· Automotive 12-V SystemsPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150°C)a TA = 25°C I...
Si4942DY: Features: TrenchFET Power MOSFETApplication· Low Power Synchronous Rectifier· Automotive 12-V SystemsPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage ...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 40 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | 7.4 | 5.3 | A |
| TA = 70°C | 5.8 | 4.3 | |||
| Avalanche Current | L = 0.1 mH | Las | 25 | ||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.8 | 0.9 | ||
| Maximum Power Dissipationa | TA = 25°C | PD | 2.1 | 1.1 | W |
| TA = 70°C | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | ||