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SI4943DY

MOSFET 20V 8.4A 2W

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SeekIC No. : 00165100 Detail

SI4943DY: MOSFET 20V 8.4A 2W

SI4943DY Data Sheet

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Part Number:
SI4943DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.3 A
Resistance Drain-Source RDS (on) : 19 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Transistor Polarity : P-Channel
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Resistance Drain-Source RDS (on) : 19 mOhms


Features:

TrenchFET Power MOSFET


Application

·  Load Switching
- Computer
- Game Systems
·  Battery Switching
- 2-Cell Li-lon


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -8.4 -6.3 A
TA = 70°C -6.7 -5.1
Pulsed Drain Current(10 s Pulse Width) IDM -30
Continuous Source Current (Diode Conduction)a IS -1.7 -0.9
Maximum Power Dissipationa TA = 25°C PD 2.0 1.1 W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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