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SI4946EY

MOSFET 60V 4.5A 2.4W

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SeekIC No. : 00164499 Detail

SI4946EY: MOSFET 60V 4.5A 2.4W

SI4946EY Data Sheet

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Part Number:
SI4946EY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 55 mOhms Configuration : Dual
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Configuration : Dual
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 55 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175)a TA = 25 ID 4.5 A
TA = 70 3.8
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 2
Maximum Power Dissipationa TA = 25 PD 2.4 W
TA = 70 1.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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