SI4947ADY

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 80 mOhms


Pinout






Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		VDS	-30		V
Gate-Source Voltage		VGS	20
Continuous Drain Current(TJ=150OC)a	TA=25	ID	-3.9	-3.0	A
	TA=70		-3.1	-2.4
Pulsed Drain Current		IDM	-20
continuous Source Current (Diode Conduction)a		IS	-1.7	-1.0
Maximum Power Dissipationa	TA=25	PD	2.0	1.2	W
	TA=70		1.3	0.76
Operating Junction and Storage Temperature Range		TJ,Tstg	-55 to 150

Description

Dual P-Channel 30-V (D-S) MOSFET Si4947ADY