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SI4948EY

MOSFET 60V 3.1A 2.4W

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SeekIC No. : 00166665 Detail

SI4948EY: MOSFET 60V 3.1A 2.4W

SI4948EY Data Sheet

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Part Number:
SI4948EY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.1 A
Resistance Drain-Source RDS (on) : 120 mOhms Configuration : Dual
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Configuration : Dual
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 120 mOhms
Continuous Drain Current : 3.1 A


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175°C)a TA = 25°C ID ±3.1 A
TA = 70°C ±2.6
Pulsed Drain Current(10 s Pulse Width) IDM ±30
Continuous Source Current (Diode Conduction)a IS -2.0
Maximum Power DissipationaMOSFET)a, b TA = 25°C PD 2.4 W
TA = 70°C 1.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175 °C



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