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SI4953ADY

MOSFET 30V 4.9A 2W

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SeekIC No. : 00166615 Detail

SI4953ADY: MOSFET 30V 4.9A 2W

SI4953ADY Data Sheet

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Part Number:
SI4953ADY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.7 A
Resistance Drain-Source RDS (on) : 53 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 53 mOhms
Continuous Drain Current : 3.7 A


Pinout

Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150 )a TA = 25 ID 4.9 3.7 A
TA = 70 3.9 2.9
Pulsed Drain Current IDM 30
continuous Source Current (Diode Conduction)a IS 1.7 0.9
Maximum Power Dissipationa TA = 25 PD 2.0 1.1 W
TA = 70 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150





Description

30-V (D-S) Dual Si4953ADY




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