SI4953DY

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Continuous Drain Current : - 3.7 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

· 100% Rg Tested


Pinout




Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 150)a	TA = 25	ID	-4.9	A
	TA = 70		-3.9
Pulsed Drain Current		IDM	-30
Continuous Source Current (Diode Conduction)a		IS	-1.7
Maximum Power Dissipationa	TA = 25	PD	2.0	W
	TA = 70		1.3
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 150