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Si4955DY

Features: TrenchFET® Power MOSFETsLow Gate Drive (2.5 V) Capability For Channel 2ApplicationGame Station − Load SwitchPinoutSpecifications Parameter Symbol Channel-1 Channel-2 Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 30 −20 V ...

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Si4955DY: Features: TrenchFET® Power MOSFETsLow Gate Drive (2.5 V) Capability For Channel 2ApplicationGame Station − Load SwitchPinoutSpecifications Parameter Symbol Channel-1 Channel-2 Uni...

Si4955DY Data Sheet

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Part Number:
Si4955DY
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TrenchFET® Power MOSFETs
Low Gate Drive (2.5 V) Capability For Channel 2


Application

Game Station
    − Load Switch


Pinout

Connection Diagram


Specifications

Parameter Symbol Channel-1 Channel-2 Unit
10 secs Steady State 10 secs Steady State
Drain-Source Voltage VDS 30 −20 V
Gate-Source Voltage VGS ±20 ±8
Continuous Drain Current (TJ = 150 )a TA = 25 ID −5.0 −3.8 −7.0 −5.3 A
TA = 70 −4.0 −3.0 −5.6 −4.2
Pulsed Drain Current IDM −20
Continuous Source Current (Diode Conduction)a IS 1.7 0.9 −1.7 −0.9
Maximum Power Dissipationa TA = 25 PD 2.0 1.1 2 1.1 W
TA = 70 1.3 0.7 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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