SI4963DY

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 23 mOhms
Continuous Drain Current : - 6.2 A


Features:

` 6.2 A, 20 V, RDS(ON) = 33 mW @ VGS = 4.5 V
  RDS(ON) = 50 mW @ VGS = 2.5 V
` Extended VGSS range (±12V) for battery applications
` Low gate charge
` High performance trench technology for extremely
  low RDS(ON)
` High power and current handling capability


Application

· Load switch
· Motor drive
· DC/DC conversion
· Power management


Pinout




Specifications

Symbol	Parameter	Si4822DY	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-6.2	A
		-40
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1
		0.9
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +175	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40	°C/W

Description

This P-Channel 2.5V specified MOSFET Si4963DY is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).