Features: · TrenchFET®Power MOSFETS: 2.5-V Rated· Low Thermal ResistanceApplication· Load/Power Switching for Cell Phones and Pagers· PA Switch in Cellular Devices· Battery Operated SystemsPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 12 ...
Si5406DC: Features: · TrenchFET®Power MOSFETS: 2.5-V Rated· Low Thermal ResistanceApplication· Load/Power Switching for Cell Phones and Pagers· PA Switch in Cellular Devices· Battery Operated SystemsPinou...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 12 | V | ||
| Gate-Source Voltage | VGS | ±8 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -9.5 | -6.9 | A |
| TA = 85 | -6.8 | -4.9 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 20 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.1 | 1.1 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.3 | W |
| TA = 85 | 1.3 | 0.7 | |||
| Soldering Recommendations (Peak Temperature)b, c | 260 | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||