Si5406DC

Features: · TrenchFET®Power MOSFETS: 2.5-V Rated· Low Thermal ResistanceApplication· Load/Power Switching for Cell Phones and Pagers· PA Switch in Cellular Devices· Battery Operated SystemsPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 12 ...

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SeekIC No. : 004490465 Detail

Si5406DC: Features: · TrenchFET®Power MOSFETS: 2.5-V Rated· Low Thermal ResistanceApplication· Load/Power Switching for Cell Phones and Pagers· PA Switch in Cellular Devices· Battery Operated SystemsPinou...

floor Price/Ceiling Price

Part Number:
Si5406DC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· TrenchFET®Power MOSFETS: 2.5-V Rated
· Low Thermal Resistance



Application

· Load/Power Switching for Cell Phones and Pagers
· PA Switch in Cellular Devices
· Battery Operated Systems



Pinout

  Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -9.5 -6.9 A
TA = 85 -6.8 -4.9
Pulsed Drain Current(10 s Pulse Width) IDM 20
Continuous Source Current (Diode Conduction)a IS 2.1 1.1
Maximum Power Dissipationa TA = 25 PD 2.5 1.3 W
TA = 85 1.3 0.7  
Soldering Recommendations (Peak Temperature)b, c   260
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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