Si5414DC

The Si5414DC is designed as one kind of N-channel 20V (D-S) MOSFETs with typical applications of load switches with notebook system power.

It has four features. (1)Halogen-free according to IEC 61249-2-21 definition. (2TrenchFET power MOSFET. (3)100% Rg tested. (4)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings Si5414DC have been concluded into several points as follow. (1)Its drain to source voltage would be 20V. (2)Its gate to source voltage would be +/-12V. (3)Its continuous drain current (Tj=150°C) would be 6A. (4)Its pulsed drain current would be 30A. (5)Its continuous source to drain diode current would be 5.2A at Tc=25°C and would be 2.1A at Ta=25°C. (6)Its maximum power dissipation would be 6.3W at Tc=25°C and would be 4W at Tc=70°C and would be 2.5W at Ta=25°C and would be 1.6W at Ta=70°C. (7)Its operating junction and storage temperature range would be from -55°C to 150°C (8)Its soldering recommendations (peak temperature) would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics Si5414DC are concluded as follow. (1)Its drain to source breakdown voltage would be min 20V. (2)Its Vds temperature coefficient would be typ 19mV/°C. (3)Its Vgs(th) temperature coefficient would be typ -4mV/°C (4)Its zero gate voltage drain current would be max 1A at Vds=20V, Vgs=0V and would be max 5A at Vds=20V, Vgs=0V, Tj=55°C. (5)Its gate to source threshold voltage would be min 0.6V and max 1.5V. (6)Its gate to source leakage would be max +/-100nA. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!