Si5511DC

The Si5511DC is designed as one kind of N- and P-Channel 30 V (D-S) MOSFET device that has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)Compliant to RoHS Directive 2002/95/EC. Also this device can be used in wide range of applications such as (1)load switch for portable applications; (2)DC/DC converter.

The absolute maximum ratings of the Si5511DC can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 12 V;(3)Continuous Drain Current (TJ = 150 °C): 4.0 to -3.6 A;(4)Pulsed Drain Current: 15 or -10 A;(5)Continuous Source-Drain Diode Current: 2.6 to 1.7 A;(6)Maximum Power Dissipation: 3.10 W or 0.84 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C;(8)Soldering Recommendations (Peak Temperature): 260 °C.

The electrical characteristics of the Si5511DC can be summarized as:(1)Gate Threshold Voltage: 0.7 to 2.0 V;(2)Drain-Source Breakdown Voltage: +/-30 V;(3)Zero Gate Voltage Drain Current: 1 or 10 uA;(4)On-State Drain Current: 15 A;(5)Drain-Source On-State Resistance: 0.045 to 0.090 ;(6)Forward Transconductance: 10.8 to 6.56 S. If you want to know more information about the Si5511DC, please download the datasheet in www.seekic.com or www.chinaicmart.com .