Si5513CDC

The Si5513CDC is designed as one kind of N- and P-channel 20V (D-S) MOSFETs with typical applications of load switch for portable devices.

It has four features. (1)Halogen-free according to IEC 61249-2-21 definition. (2)TrenchFET power MOSFETs. (3)100% Rg tested. (4)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings Si5513CDC have been concluded into several points as follow. (1)Its drain to source voltage would be N-channel 20V and P-channel -20V. (2)Its gate to source voltage would be +/-12V. (3)Its continuous drain current (Tj=150°C) would be N-Channel 4A and P-Channel -3.7A at Tc=25°C and woule be N-channel 4A and P-channel -3.0A at Tc=70°C and would be N-channel 4A and P-channel -2.4A at Ta=25°C andwould be N-Channel 3.5A P-Channel -1.9A. (4)Its pulsed drain current would be N-Channel 10A and P-Channel -8A. (5)Its source drain current diode current would be N-Channel 2.6A and P-Channel -2.6A at Tc=25°C and would be N-Channel 1.4A and P-Channel -1.7A at Ta=25°C. (6)Its operating junction and storage temperature range would be from -55°C to 150°C. (7)Its soldering recommendation (peak temperayure) would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics Si5513CDC are concluded as follow. (1)Its drain to source breakdown voltage would be min 20V at Vgs=0V and Id=250A and would be min -20V at Vgs=0V at Id=-250A. (2)Its Vds temperature coeffieient would be typ 23.7mV/°C at Id=250A and would be typ -19.5mV/°C at Id=-250A. (3)Its Vgs(th) temperature coefficient would be typ -3.5mV/°C at Id=250A and would be typ 2.8mV/°C at Id=-250A. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!