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Si5513DC

PinoutSpecifications Parameter Symbol Channel-1 Channel-2 Unit 5 secs Steady State 5 secs Steady State Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID 4.2 3.1 -2.9 -2.1 A TA = 85 3.0 2.2 ...

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Si5513DC: PinoutSpecifications Parameter Symbol Channel-1 Channel-2 Unit 5 secs Steady State 5 secs Steady State Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12...

Si5513DC Data Sheet

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Part Number:
Si5513DC
Supply Ability:
5000

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Product Details

Description



Pinout

Connection Diagram


Specifications

Parameter Symbol Channel-1 Channel-2 Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 4.2 3.1 -2.9 -2.1 A
TA = 85 3.0 2.2 -2.1 -1.5
Continuous Source Current (Diode Conduction)a IS 1.8 0.9 -1.8 -0.9
Pulsed Drain Current IDM 10 -10
Maximum Power Dissipationa TA = 25 PD 2.1 1.1 2.1 1.1 W
TA = 85 1.1 0.6 1.1 0.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)b, c   260

Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.




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