Si5515CDC

The Si5515CDC is designed as one kind of N- and P-Channel 20 V (D-S) MOSFETs with typical applications of load switch for portable devices.

It has four features. (1)Halogen-free according to IEC 61249-2-21 definition. (2)TrenchFET power MOSFETs. (3)100 % Rg tested. (4)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings Si5515CDC have been concluded into several points as follow. (1)Its drain to source voltage would be N-channel 20V and P-channel -20V. (2)Its gate to source voltage would be +/-8V. (3)Its continuous drain current (Tj=150°C) would be N-Ch 4A and P-Ch -4A at Tc=25°C and would be N-Ch 4A and P-Ch -3A at Tc=70°C and would be N-Ch 4A and P-Ch -3.1A at Ta=25°C and would be N-Ch 4A and P-Ch -2.5A at Ta=70°C. (4)Its pulsed drain current would be N-Ch 20A and P-Ch -10A. (5)Its source drain current diode current would be N-Ch 2.6A and P-Ch -2.6A at Tc=25°C and would be N-Ch 1.7A and P-Ch -1.7A at Ta=25°C. (6)Its operating junction and storage temperature range would be from -55°C to 150°C. (7)Its soldering recommendations (peak temperature) would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics Si5515CDC are concluded as follow. (1)Its drain to source breakdown voltage would be min 20V at Vgs=0V, Id=250A and would be min -20V at Vgs=0V, Id=-250A. (2)Its Vds temperature coefficient would be typ 18mV/°C at Id=250A and typ -19mV/°C at Id=-250A. (3)Its Vgs(th) temperature coefficien would be typ -2.7mV/°C at Id=250 A and would be typ 2.5mV/°C at Id=-250A. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!