Si5855CDC-T1-E3, US $ .12-.14 , Vishay/Siliconix, Si5855CDC-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00147567 Detail

Si5855CDC-T1-E3: MOSFET 20V 3.7A 2.8W 144mohm @ 4.5V

Si5855CDC-T1-E3 Data Sheet

US $ .12~.14 / Piece | Get Latest Price

Part Number:: Si5855CDC-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Upload time: 2025/12/24

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What is this?

SI5853CDC-T1-E3 evaluate
MOSFET 20V 4.0A 3.1W
Si5853DC evaluate
PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage(...
SI5853DC-T1 evaluate
MOSFET 20V 3.6A 2.1W

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	2.5 A
Resistance Drain-Source RDS (on) :	144 mOhms at 4.5 V	Configuration :	Single Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	ChipFET	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 144 mOhms at 4.5 V
Package / Case : ChipFET

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