Si5856DC

Features: · TrenchFET®Power MOSFETS· Ultra Low rDS(on)· Ultra Low VF Schottky· Si5853DC Pin CompatibleApplication· Buck Rectifier Switch, Buck-Boost· Synchronous Rectifier or Load· Switch For Portable DevicesPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Sou...

product image

Si5856DC Picture
SeekIC No. : 004490518 Detail

Si5856DC: Features: · TrenchFET®Power MOSFETS· Ultra Low rDS(on)· Ultra Low VF Schottky· Si5853DC Pin CompatibleApplication· Buck Rectifier Switch, Buck-Boost· Synchronous Rectifier or Load· Switch For Po...

floor Price/Ceiling Price

Part Number:
Si5856DC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· TrenchFET®Power MOSFETS
· Ultra Low rDS(on)
· Ultra Low VF Schottky
· Si5853DC Pin Compatible





Application

· Buck Rectifier Switch, Buck-Boost
· Synchronous Rectifier or Load
· Switch For Portable Devices





Pinout

  Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage(MOSFET and Schottky) VDS 20 V
Reverse Voltage (Schottky) VKA 20
Gate-Source Voltage(MOSFET) VGS ±8
Continuous Drain Current (TJ = 150) (MOSFET)a TA = 25 ID 5.9 4.4 A
TA = 85 4.2 3.1
Pulsed Drain Current(MOSFET) IDM 20
Continuous Source Current (MOSFET Diode Conduction)a IS 1.8 0.9
Average Foward Current (Schottky) IF 1.0 1.0
Pulsed Foward Current (Schottky) IFM 7
Maximum Power Dissipation (MOSFET)a TA = 25 PD 2.1 1.1 W
TA = 85 1.1 0.6
Maximum Power Dissipation (Schottky)a TA = 25 1.9 1.1
TA = 85 1.0 0.56
Soldering Recommendations (Peak Temperature)b, c 260
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150

Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.






Description

N-Channel 1.8-V (G-S) MOSFET With Schottky Diode Si5856DC




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Isolators
Programmers, Development Systems
Semiconductor Modules
Motors, Solenoids, Driver Boards/Modules
Industrial Controls, Meters
View more