SI6433DQ

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : - 4.5 A
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source
Resistance Drain-Source RDS (on) : 37 m Ohms


Features:

• 4.5 A, 20 V. R_DS(ON) = 47 m @ V_GS = 4.5 V
                           R_DS(ON) = 65 m @ VGS = 2.5 V
                           R_DS(ON) = 100 m @ V_GS = 1.8 V
• R_DS(ON) rated for use with 1.8 V logic
• Low gate charge (13nC typical)
• High performance trench technology for extremely
   low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Power management
• Load switch


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-20	V
VGSS	Gate-Source Voltage		±8	V
ID	Drain Current Continuous	(Note 1a)	-5.4	A
	Pulsed		-40
PD	Power Dissipation	(Note 1a)	1.3	W
		(Note 1b)	0.6
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

This P-Channel 1.8V specified MOSFET Si6433DQ is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.