Features: TrenchFET® Power MOSFETApplication· Battery Switch· Load SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID -8 -6.3 A TA = 70 ...
Si6441DQ: Features: TrenchFET® Power MOSFETApplication· Battery Switch· Load SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -30 V Gate-Sou...
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Parameter | Symbol | 10 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | -30 | V | ||
Gate-Source Voltage | VGS | ±20 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -8 | -6.3 | A |
TA = 70 | -6.4 | -5.0 | |||
Pulsed Drain Current(10 s Pulse Width) | IDM | -30 | |||
Continuous Source Current (Diode Conduction)a | IS | -1.6 | -01.0 | ||
Maximum Power Dissipationa | TA = 25 | PD | 1.75 | 1.08 | W |
TA = 70 | 1.14 | 0.69 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 |