SI6466DQ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 7.8 A
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

• 7.8 A, 20 V R_DS(ON) = 15 m @ V_GS = 4.5 V
                     R_DS(ON) = 22 m @ V_GS = 2.5 V
• Extended V_GSS range (±12V) for battery applications
• High performance trench technology for extremely
  low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Battery protection
• DC/DC conversion
• Power management
• Load switch


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-20	V
VGSS	Gate-Source Voltage		±12	V
ID	Drain Current Continuous	(Note 1a)	7.8	A
	Pulsed		30
PD	Power Dissipation	(Note 1a)	1.4	W
		(Note 1b)	1.1
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

This N-Channel MOSFET of the Si6466DQ is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (2.5V to 12V).