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Si6562DQ

PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID ±4.5 ±3.5 A TA = 70 ±3.6 ±2.7 Pulsed Drain Current IDM ±30 ±30 Continuous Sour...

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Si6562DQ: PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current (TJ = 150)a TA = 25...

Si6562DQ Data Sheet

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Part Number:
Si6562DQ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



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Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID ±4.5 ±3.5 A
TA = 70 ±3.6 ±2.7
Pulsed Drain Current IDM ±30 ±30
Continuous Source Current (Diode Conduction)a IS -0.1 -0.7
Maximum Power Dissipationa TA = 25 PD 1.0 W
TA = 70 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W





Description

N/P-Channel 20-V (D-S) Si6562DQ
 



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