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Si6880AEDQ

Specifications Parameter Symbol Si6880AEDQ Si6880EDQ Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current TA = 25 ID 7.2 7.5 A TA = 70 5.7 6 Pulsed Drain Current IDM 30 30 Continuous Source Current (MOSFET Diode ...

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Si6880AEDQ: Specifications Parameter Symbol Si6880AEDQ Si6880EDQ Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current TA = 25 ID 7.2 7.5 A...

Si6880AEDQ Data Sheet

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Part Number:
Si6880AEDQ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Specifications

Parameter Symbol Si6880AEDQ Si6880EDQ Unit
Drain-Source Voltage VDS 20 20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current TA = 25 ID 7.2 7.5 A
TA = 70 5.7 6
Pulsed Drain Current IDM 30 30
Continuous Source Current (MOSFET Diode Conduction) IS 1.5 1.6
Power Dissipation TA = 25 PD 1.5 1.78 W
TA = 70 0.96 1.14
Operating Junction and Storage Temperature Range Tj and Tstg −55 to 150 −55 to 150
Maximum Junction-to-Ambient RthJA 84 30 /W



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