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Si6820DQ

PinoutSpecifications Parameter Symbol N-Channel Unit Drain-Source Voltage (MOSFET) VDS 20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ±12 Continuous Drain Current (TJ = 150)(MOSFET)a, b TA = 25 ID ±1.9 A TA = 70 ±1.5 Pulsed Drain Curre...

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Si6820DQ: PinoutSpecifications Parameter Symbol N-Channel Unit Drain-Source Voltage (MOSFET) VDS 20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ±12 Continuo...

Si6820DQ Data Sheet

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Part Number:
Si6820DQ
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Parameter Symbol N-Channel Unit
Drain-Source Voltage (MOSFET) VDS 20 V
Reverse Voltage (Schottky) VKA 20
Gate-Source Voltage (MOSFET) VGS ±12
Continuous Drain Current (TJ = 150)(MOSFET)a, b TA = 25 ID ±1.9 A
TA = 70 ±1.5
Pulsed Drain Current (MOSFET) IDM ±8
Continuous Source Current (MOSFET Diode Conduction)a, b IS 1.0
Average Foward Current (Schottky) IF 1.5  
Pulsed Foward Current (Schottky) IFM 30  
Maximum Power Dissipation (MOSFET)a, b TA = 25 PD 1.2 W
TA = 70 0.76
Maximum Power Dissipation (Schottky)a, b TA = 25 1.0  
TA = 70 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W



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