Features: · Low rDS(on)· VGS Max Rating: 14 V· Exceeds 2-kV ESD Protection· 28-V VDS Rated· Symetrical Voltage Blocking (Off Voltage)PinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 28 V Gate-Source Voltage VGS ±14 Continuous Drain Cur...
Si6924AEDQ: Features: · Low rDS(on)· VGS Max Rating: 14 V· Exceeds 2-kV ESD Protection· 28-V VDS Rated· Symetrical Voltage Blocking (Off Voltage)PinoutSpecifications Parameter Symbol 10 secs Steady Stat...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 28 | V | ||
| Gate-Source Voltage | VGS | ±14 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 4.6 | 4.1 | A |
| TA = 70 | 3.7 | 3.2 | |||
| Pulsed Drain Current | IDM | 20 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.2 | 0.9 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 1.3 | 1.0 | W |
| TA = 70 | 0.84 | 0.64 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||
The Si6924AEDQ is a dual n-channel MOSFET with ESD protection and gate over-voltage protection circuitry, incorporated into the MOSFET. The device is designed for use in Lithium Ion battery pack circuits. The common-drain contsruction takes advantage of the typical battery pack topology, allowing a further reduction of the device's on-resistance. The 2-stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode of the Si6924AEDQ is designed to protect the gate from any remaining ESD energy and over-voltages above the gates inherent safe operating range. The series resistor used to limit the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to 10 mA @ 14 V and the maximum toff to 12 s. The Si6924AEDQ has been optimized as a battery or load switch in Lithium Ion applications with the advantage of both a 2.5-V rDS(on) rating and a safe 14-V gate-to-source maximum rating.