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Si7212DN

Features: · TrenchFET® Gen II Power MOSFET· 100% Rg Tested· Space Savings Optimized for FastSwitchingApplication· Synchronous Rectification· Intermediate DriverSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±1...

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SeekIC No. : 004490644 Detail

Si7212DN: Features: · TrenchFET® Gen II Power MOSFET· 100% Rg Tested· Space Savings Optimized for FastSwitchingApplication· Synchronous Rectification· Intermediate DriverSpecifications Parameter Sym...

Si7212DN Data Sheet

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Part Number:
Si7212DN
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5000

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Product Details

Description



Features:

· TrenchFET® Gen II Power MOSFET
· 100% Rg Tested
· Space Savings Optimized for Fast
Switching




Application

· Synchronous Rectification
· Intermediate Driver




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 6.8 4.9 A
TA = 85 4.9 3.5
Pulsed Drain Current IDM 20
Continuous Source Current (Diode Conduction)a IS 2.2 1.1
Maximum Power Dissipationa TA = 25 PD 2.6 1.3 W
TA = 85 1.4 0.69
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)b,c 260





Description

Dual N-Channel 30-V (D-S) MOSFET Si7212DN
 



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