Si7236DP

SpecificationsDescriptionDual N-Channel 20-V (D-S) MOSFET The Si7236DP is designed as one kind of Dual N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)synchronous rectification; (2)DC-DC point-of-load. Also this device has some points of features:(1)Ha...

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SeekIC No. : 004490655 Detail

Si7236DP: SpecificationsDescriptionDual N-Channel 20-V (D-S) MOSFET The Si7236DP is designed as one kind of Dual N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)s...

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Part Number:
Si7236DP
Supply Ability:
5000

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Upload time: 2025/12/25

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Description

Dual N-Channel 20-V (D-S) MOSFET

The Si7236DP is designed as one kind of Dual N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)synchronous rectification; (2)DC-DC point-of-load. Also this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFET.

The absolute maximum ratings of the Si7236DP can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-12 V;(3)Continuous Drain Current (TJ = 150 °C): 16.6 or 60 A;(4)Pulsed Drain Current: 80 A;(5)Continuous Source-Drain Diode Current: 2.9 or 38 A;(6)Maximum Power Dissipation: 2.2 to 46 W;(7)Operating Junction and Storage Temperature Range: -55 to 150;(8)Soldering Recommendations (Peak Temperature): 260.

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 12 V;(2)VDS Temperature Coefficient: 6 mV/;(3)VGS(th) Temperature Coefficient: -4.5 mV/;(4)Gate-Source Threshold Voltage: 0.60 to 1.5 V;(5)Gate-Source Leakage: +/-100 nA;(6)Zero Gate Voltage Drain Current: 1 or 10 uA;(7)On-State Drain Current: 20 A. If you want to know more information about the Si7236DP, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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