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Si7356DP

Features: ` Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology` New Low Thermal Resistance PowerPAK Package with Low 1.07-mm ProfileApplication· Low-Side DC/DC Conversion - Notebook - Server - Workstation· Point-of-Load ConversionSpecifications Parameter Sym...

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SeekIC No. : 004490666 Detail

Si7356DP: Features: ` Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology` New Low Thermal Resistance PowerPAK Package with Low 1.07-mm ProfileApplication· Low-Side DC/DC Conv...

Si7356DP Data Sheet

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Part Number:
Si7356DP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Ultra-Low On-Resistance Using High Density
    TrenchFET Gen II Power MOSFET Technology
` New Low Thermal Resistance PowerPAK Package
    with Low 1.07-mm Profile


Application

· Low-Side DC/DC Conversion
   - Notebook
   - Server
   - Workstation
· Point-of-Load Conversion


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID

30

 18 A
TA = 70 25 15
Pulsed Drain Current IDM 70
Continuous Source Current (Diode Conduction)a IS 4.5 1.8
Maximum Power Dissipationa TA = 25 PD 5.4 1.9 W
TA = 70 3.4 1.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W



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