Features: · Extremely Low Qgd WFET Technology for Low Switching Losses· TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg TestedApplication· High-Side DC/DC Conversion− Notebook− ServerSpecifications Parameter Symbol ...
Si7392DP: Features: · Extremely Low Qgd WFET Technology for Low Switching Losses· TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg TestedApplicat...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 15 | 9 | A |
| TA = 70 | 12 | 7 | |||
| Pulsed Drain Current | IDM | ±50 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.1 | 1.5 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5 | 1.8 | W |
| TA = 70 | 3.2 | 1.1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||